feb.1999 v dss ................................................................................ 500v r ds (on) (max) ................................................................. 4.4 w i d ............................................................................................ 3a v iso ................................................................................ 2000v 500 30 3 9 30 C55 ~ +150 C55 ~ +150 2000 2.0 v v a a w c c v rms g FS3KM-10 v dss v gss i d i dm p d t ch t stg v iso outline drawing dimensions in mm to-220fn mitsubishi nch power mosfet FS3KM-10 high-speed switching use application smps, dc-dc converter, battery charger, power supply of printer, copier, hdd, fdd, tv, vcr, per- sonal computer etc. v gs = 0v v ds = 0v ac for 1minute, terminal to case typical value symbol drain-source voltage gate-source voltage drain current drain current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight parameter conditions ratings unit maximum ratings (tc = 25 c) w q e 15 ?0.3 14 ?0.5 10 ?0.3 2.8 ?0.2 f 3.2 ?0.2 1.1 ?0.2 1.1 ?0.2 0.75 ?0.15 2.54 ?0.25 2.54 ?0.25 2.6 ?0.2 4.5 ?0.2 0.75 ?0.15 3 ?0.3 3.6 ?0.3 6.5 ?0.3 123 q gate w drain e source
feb.1999 mitsubishi nch power mosfet FS3KM-10 high-speed switching use i d = 1ma, v gs = 0v i g = 100 m a, v ds = 0v v gs = 25v, v ds = 0v v ds = 500v, v gs = 0v i d = 1ma, v ds = 10v i d = 1a, v gs = 10v i d = 1a, v gs = 10v i d = 1a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v, i d = 1a, v gs = 10v, r gen = r gs = 50 w i s = 1a, v gs = 0v channel to case v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v v m a ma v w v s pf pf pf ns ns ns ns v c/w 500 30 2 1.0 3 3.4 3.4 1.5 300 35 6 13 10 30 30 1.5 10 1 4 4.4 4.4 2.0 4.17 50 40 30 20 10 0 200 150 100 50 0 10 8 6 4 2 0 0 1020304050 p d = 30w v gs = 20v 10v 8v 6v 5v t c = 25? pulse test 5 4 3 2 1 0 0 4 8 12 16 20 6v 5v p d = 30w v gs = 20v 10v 8v t c = 25? pulse test 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 23 5710 1 23 5710 2 23 5710 3 2 tw=10? 1ms 10ms 100? dc t c = 25? single pulse power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance symbol unit parameter test conditions limits min. typ. max. performance curves
feb.1999 mitsubishi nch power mosfet FS3KM-10 high-speed switching use 10 8 6 4 2 0 0 4 8 12 16 20 t c = 25? v ds = 50v pulse test 0 23 10 ? 5710 ? 23 5710 0 23 5710 1 10 8 6 4 2 t c = 25? pulse test v gs = 10v 20v 10 1 7 5 3 2 10 ? 10 ? 23 5710 0 10 0 7 5 3 2 23 5710 1 t c = 25? 125? 75? v ds = 10v pulse test 23 5710 0 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 23 5710 1 23 5710 2 2 tch = 25? f = 1mhz v gs = 0v ciss coss crss 23 5710 0 10 2 7 5 3 2 10 1 7 5 5 3 2 23 5710 1 10 ? tch = 25? v dd = 200v v gs = 10v r gen = r gs = 50 w t f t d(off) t r t d(on) 40 32 24 16 8 0 0 4 8 12 16 20 t c = 25? pulse test i d = 4a 3a 2a 1a on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns)
feb.1999 mitsubishi nch power mosfet FS3KM-10 high-speed switching use 5.0 4.0 3.0 2.0 1.0 0 ?0 0 50 100 150 v ds = 10v i d = 1ma 1.4 1.2 1.0 0.8 0.6 0.4 ?0 0 50 100 150 v gs = 0v i d = 1ma 20 16 12 8 4 0 0 4 8 12 16 20 200v 400v v ds = 100v tch = 25? i d = 3a 10 8 6 4 2 0 0 0.8 1.6 2.4 3.2 4.0 25? vgs = 0v pulse test t c = 125? 75? 10 0 7 5 3 2 10 ? ?0 10 1 7 5 3 2 0 50 100 150 v gs = 10v i d = 1/2i d pulse test 10 ? 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? 10 ? p dm tw d= t tw t d=1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch (?) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) (?/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) drain-source breakdown voltage v br (dss) (t?) drain-source breakdown voltage v br (dss) (25?)
|
